Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm (Articolo in rivista)

Type
Label
  • Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4825072 (literal)
Alternative label
  • Casalino, M.; Iodice, M.; Sirleto, L.; Rao, S.; Rendina, I.; Coppola, G. (2013)
    Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm
    in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Casalino, M.; Iodice, M.; Sirleto, L.; Rao, S.; Rendina, I.; Coppola, G. (literal)
Pagina inizio
  • 153103 (literal)
Pagina fine
  • 153103-4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 114 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 15 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • National Research Council-Institute for Microelectronics and Microsystems, Via P. Castellino 111, 80131 Napoli, Italy Department of Information Engineering, Infrastructure and Sustainable Energy (DIIES), ``Mediterranea'' University of Reggio Calabria, Via Graziella Loc. Feo di Vito, 89122 Reggio Calabria, Italy (literal)
Titolo
  • Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm (literal)
Abstract
  • We report on the fabrication and characterization of a metal-semiconductor-metal photodetector operating at 1550 nm and integrated into a silicon-on-insulator waveguide. Detection uses internal photoemissions through a metal/Si interface. In particular, a small metal/Si contact layer directly deposited on the vertical output facet of the waveguide absorbs the incoming radiation confined into a rib waveguide. The device parameters for responsivity, dark current, and bandwidth take values 3.5 mA, 3.5 nA, and 1 GHz, respectively. The results obtained indicate device suitability in power monitoring and telecommunications applications. (literal)
Editore
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
Editore di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it