CdTe-based Auston switch for optically-driven integrated optics devices (Articolo in rivista)

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  • CdTe-based Auston switch for optically-driven integrated optics devices (Articolo in rivista) (literal)
Anno
  • 2002-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/1521-3951(200201)229:2<1077::AID-PSSB1077>3.0.CO;2-G (literal)
Alternative label
  • Silvia Maria Pietralunga, Andrea Zappettini, Fabio Ranni, Francesco Bissoli, Mario Martinelli (2002)
    CdTe-based Auston switch for optically-driven integrated optics devices
    in Physica status solidi. B, Basic research; WILEY-V C H VERLAG GMBH, WEINHEIM (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Silvia Maria Pietralunga, Andrea Zappettini, Fabio Ranni, Francesco Bissoli, Mario Martinelli (literal)
Pagina inizio
  • 1077 (literal)
Pagina fine
  • 1080 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Conference: 10th International Conference on II-VI Compounds Location: BREMEN, GERMANY Date: SEP 09-14, 2001 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://onlinelibrary.wiley.com/doi/10.1002/1521-3951(200201)229:2%3C1077::AID-PSSB1077%3E3.0.CO;2-G/abstract (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 229 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1) CoreCom, I-20131 Milan, Italy; 2) CNR, MASPEC, I-43100 Parma, Italy; 3) Politecn Milan, I-20133 Milan, Italy (literal)
Titolo
  • CdTe-based Auston switch for optically-driven integrated optics devices (literal)
Abstract
  • We report on the implementation and characterisation of Auston switches based on semi-insulating CdTe, aimed at optically driving integrated optics modulators. In view of applications, switching of voltages around a few volts in sub-nanosecond or picosecond time scale is required, while minimizing optical energy. Most efficient operation is obtained at lambda = 810 nm, using In: CdTe, where 6 V are switched by use of 2.5 nJ pulses in the nanosecond regime. Intrinsic sub-nanosecond response times are evident and from experimental results activating switching energies down to 50 pJ per pulse can be estimated for the device, when switching at 10 GHz, corresponding to 500 mW pulse peak power. (literal)
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