http://www.cnr.it/ontology/cnr/individuo/prodotto/ID263115
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si (Articolo in rivista)
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- Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.4751254 (literal)
- Alternative label
Panciera F, Hoummada K, Mastromatteo M, De Salvador D, Napolitani E, Boninelli S, Impellizzeri G, Priolo F, Carnera A, Mangelinck D (2012)
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si
in Applied physics letters
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- Panciera F, Hoummada K, Mastromatteo M, De Salvador D, Napolitani E, Boninelli S, Impellizzeri G, Priolo F, Carnera A, Mangelinck D (literal)
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- http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000101000010103113000001&idtype=cvips&doi=10.1063/1.4751254&prog=normal (literal)
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- [ 1 ] Univ Paul Cezanne, CNRS, IM2NP, F-13397 Marseille 20, France
[ 2 ] Univ Padua, CNISM, I-35131 Padua, Italy
[ 3 ] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy
[ 4 ] Univ Padua, CNR IMM MATIS, I-35131 Padua, Italy
[ 5 ] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy
[ 6 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)
- Titolo
- Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial-regrowth of amorphous Si (literal)
- Abstract
- The fluorine redistribution during partial solid-phase-epitaxial-regrowth at 650 degrees C of a preamorphized Si substrate implanted by F was investigated by atom probe tomography (APT), transmission electron microscopy, and secondary ions mass spectrometry. Three-dimensional spatial distribution of F obtained by APT provides a direct observation of F-rich clusters with a diameter of less than 1.5 nm. Density variation compatible with cavities and F-rich molecular ions in correspondence of clusters are in accordance with cavities filled by SiF4 molecules. Their presence only in crystalline Si while they are not revealed by statistical analysis in amorphous suggests that they form at the amorphous/crystal interface. (literal)
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