The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots (Articolo in rivista)

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  • The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.4805351 (literal)
Alternative label
  • Trevisi G. [ 1 ] ; Suarez I. [ 2 ] ; Seravalli L. [ 1 ] ; Rivas D. [ 2 ] ; Frigeri P. [ 1 ] ; Munoz-Matutano G. [ 2 ] ; Grillo V. [ 1,3 ] ; Nasi L. [ 1 ] ; Martinez-Pastor J. [ 2 ] (2013)
    The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots
    in Journal of applied physics; AMER INST PHYSICS, MELVILLE, NY 11747-4501 USA (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Trevisi G. [ 1 ] ; Suarez I. [ 2 ] ; Seravalli L. [ 1 ] ; Rivas D. [ 2 ] ; Frigeri P. [ 1 ] ; Munoz-Matutano G. [ 2 ] ; Grillo V. [ 1,3 ] ; Nasi L. [ 1 ] ; Martinez-Pastor J. [ 2 ] (literal)
Pagina inizio
  • 194306-1 (literal)
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  • http://scitation.aip.org/content/aip/journal/jap/113/19/10.1063/1.4805351 (literal)
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  • 113 (literal)
Rivista
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  • 19 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • [ 1 ] CNR IMEM Inst, I-43124 Parma, Italy [ 2 ] Univ Valencia, Inst Ciencia Mat, Unidad Asociada CSIC IMM, UMDO, Valencia 46071, Spain [ 3 ] CNR Ist Nanosci S3, I-41125 Modena, Italy (literal)
Titolo
  • The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots (literal)
Abstract
  • The structural and morphological features of bimodal-sized InAs/(In) GaAs quantum dots with density in the low 10(9) cm(-2) range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rate-equation model for the exciton recombination dynamics, we show that thermal population of dark states is inhibited in both QD families capped by high In content InGaAs layers. We discuss this behavior in terms of alloy disorder and increased density of point defects in the InGaAs pseudomorphic layer. (literal)
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