http://www.cnr.it/ontology/cnr/individuo/prodotto/ID260804
Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme (Articolo in rivista)
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- Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme (Articolo in rivista) (literal)
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- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1364/OE.21.010172 (literal)
- Alternative label
Patimisco P. [ 1,2,3 ] ; Scamarcio G. [ 1,2,3 ] ; Santacroce M. V. [ 1,2,3 ] ; Spagnolo V. [ 1,2,3 ] ; Vitiello M. S. [ 4,5,6 ] ; Dupont E. [ 7 ] ; Laframboise S. R. [ 7 ] ; Fathololoumi S. [ 7 ] ; Razavipour G. S. [ 8 ] ; Wasilewski Z. [ 7,8 ] (2013)
Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme
in Optics express; Optical Society of America, Washington (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Patimisco P. [ 1,2,3 ] ; Scamarcio G. [ 1,2,3 ] ; Santacroce M. V. [ 1,2,3 ] ; Spagnolo V. [ 1,2,3 ] ; Vitiello M. S. [ 4,5,6 ] ; Dupont E. [ 7 ] ; Laframboise S. R. [ 7 ] ; Fathololoumi S. [ 7 ] ; Razavipour G. S. [ 8 ] ; Wasilewski Z. [ 7,8 ] (literal)
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- [ 1 ] Univ Bari Aldo Moro, Dipartimento Interateneo Fis, I-70126 Bari, Italy
[ 2 ] Politecn Bari, I-70126 Bari, Italy
[ 3 ] UOS Bari, Ist Foton & Nanotecnol, CNR, I-70126 Bari, Italy
[ 4 ] CNR, NEST, Ist Nanosci, I-56127 Pisa, Italy
[ 5 ] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[ 6 ] CNR, Dipartimento Sci Fis & Tecnol Mat, I-50125 Florence, Italy
[ 7 ] Natl Res Council Canada, Ottawa, ON, Canada
[ 8 ] Univ Waterloo, Dept Elect & Comp Engn, Waterloo Inst Nanotechnol, Waterloo, ON N2L 3G1, Canada (literal)
- Titolo
- Electronic temperatures of terahertz quantum cascade active regions with phonon scattering assisted injection and extraction scheme (literal)
- Abstract
- We measured the lattice and subband electronic temperatures of terahertz quantum cascade devices based on the optical phonon-scattering assisted active region scheme. While the electronic temperature of the injector state (j = 4) significantly increases by Delta T = T-e(4) - T-L similar to 40 K, in analogy with the reported values in resonant phonon scheme (Delta T similar to 70-110 K), both the laser levels (j = 2,3) remain much colder with respect to the latter (by a factor of 3-5) and share the same electronic temperature of the ground level (j = 1). The electronic population ratio n(2)/n(1) shows that the optical phonon scattering efficiently depopulates the lower laser level (j = 2) up to an electronic temperature T-e similar to 180 K. (literal)
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