Tunneling through Al/AlOx/Al junction: Analytical models and first-principles simulations (Articolo in rivista)

Type
Label
  • Tunneling through Al/AlOx/Al junction: Analytical models and first-principles simulations (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.87.195107 (literal)
Alternative label
  • Dieskova M. [ 1 ] ; Ferretti A. [ 2 ] ; Bokes P. [ 1 ] (2013)
    Tunneling through Al/AlOx/Al junction: Analytical models and first-principles simulations
    in Physical review. B, Condensed matter and materials physics; AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dieskova M. [ 1 ] ; Ferretti A. [ 2 ] ; Bokes P. [ 1 ] (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Dept Phys, Bratislava 81219, Slovakia [ 2 ] CNR Ist Nanosci, Ctr S3, I-41125 Modena, Italy (literal)
Titolo
  • Tunneling through Al/AlOx/Al junction: Analytical models and first-principles simulations (literal)
Abstract
  • Ultrathin AlOx layers are nowadays widely employed to make tunneling junctions and, as a common practice, experimental transport data are often rationalized in terms of analytical models invoking effective electronic and geometric properties of the oxide layer. In this paper we examine the reliability of such models by performing first-principles simulations of the transport properties of Al/AlOx/Al junctions. The band gap, effective mass, and interface width obtained from ground state density-functional calculations are used within a potential barrier model, known also as the Simmons model, and its predictions of the conductance are compared with first-principles results. We also propose an analytical expression for the conductance based on a tight-binding model of the interface oxide. We show that the success of the potential barrier model in fitting experimental transport measurements rests on its formal similarity with the tight binding model which, in contrast to the former, is directly related to the realistic electronic structure of the interface. (literal)
Editore
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
data.CNR.it