High Power Microstrip GaN-HEMT Switches for Microwave Applications (Contributo in atti di convegno)

Type
Label
  • High Power Microstrip GaN-HEMT Switches for Microwave Applications (Contributo in atti di convegno) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/EMICC.2008.4772262 (literal)
Alternative label
  • V. Alleva (1), A. Bettidi (2), A. Cetronio (2), W. Ciccognani (3,) M. De Dominicis (1), M. Ferrari (3), E. Giovine (4), Lanzieri (2), E. Limiti (3), A. Megna (1), M. Peroni (2), P. Romanini (2) (2008)
    High Power Microstrip GaN-HEMT Switches for Microwave Applications
    in 3rd European Microwave Integrated Circuits Conference (EuMIC), Amsterdam, NETHERLANDS, OCT 27-28, 2008
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • V. Alleva (1), A. Bettidi (2), A. Cetronio (2), W. Ciccognani (3,) M. De Dominicis (1), M. Ferrari (3), E. Giovine (4), Lanzieri (2), E. Limiti (3), A. Megna (1), M. Peroni (2), P. Romanini (2) (literal)
Pagina inizio
  • 194 (literal)
Pagina fine
  • 197 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Elettronica SpA, Rome 00131, Italy 2. SELEX Sistemi Integrati SpA, Rome 00131, Italy 3. Electronic Department, University of Rome \"Tor Vergata\", Rome 00133, Italy 4. CNR-IFN, Rome 00156, Italy (literal)
Titolo
  • High Power Microstrip GaN-HEMT Switches for Microwave Applications (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-2-8748-7007-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • IEEE (literal)
Abstract
  • In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the XBand switch exhibits 1dB insertion loss, better than 37dB isolation and a power handling capability at 9 GHz of better than 39dBm at 1dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2dB, better than 25dB isolation and a power handling capability of better than 38dBm in the entire bandwidth. (literal)
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