P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties (Contributo in atti di convegno)

Type
Label
  • P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties (Contributo in atti di convegno) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • Ossicini, S and Iori, F and Degoli, E and Luppi, E and Magri, R and Cantele, G and Trani, F and Ninno, D (2005)
    P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties
    in 2nd IEEE International Conference on Group IV Photonics, Antwerp, BELGIUM, SEP 21-23, 2005
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ossicini, S and Iori, F and Degoli, E and Luppi, E and Magri, R and Cantele, G and Trani, F and Ninno, D (literal)
Pagina inizio
  • 60 (literal)
Pagina fine
  • 62 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • 2nd IEEE International Conference on Group IV Photonics, Antwerp, BELGIUM, SEP 21-23, 2005 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • 2005 2ND IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ossicini, S (Reprint Author), INFM S3, Via Fogliani, I-42100 Reggio Emilia, Italy. INFM S3, I-42100 Reggio Emilia, Italy. (literal)
Titolo
  • P and B single- and co-doped silicon nanocrystals: Formation and activation energies, electronic and optical properties (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 0-7803-9070-9 (literal)
Abstract
  • We report on an ab initio study of the structural and electronic properties of B and P doped Si nanocrystals (Si-nc). The formation energies (FE) scale with the radius, the activation energies with the inverse radius. The effects of B and P co-doping show that the FE are always smaller than that for the corresponding single-doped cases and that is possible to engineer the photoluminescence properties of Si-nc. (literal)
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