Interplay between quantum confinement and electron-electron interaction in deformed silicon quantum wires (Articolo in rivista)

Type
Label
  • Interplay between quantum confinement and electron-electron interaction in deformed silicon quantum wires (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.68.245318 (literal)
Alternative label
  • Parascandolo, G and Cantele, G and Ninno, D and Iadonisi, G (2003)
    Interplay between quantum confinement and electron-electron interaction in deformed silicon quantum wires
    in Physical review. B, Condensed matter and materials physics; American Physical Society (APS), College Pk (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Parascandolo, G and Cantele, G and Ninno, D and Iadonisi, G (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://prb.aps.org/abstract/PRB/v68/i24/e245318 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 68 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 24 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Parascandolo, G (Reprint Author), Ecole Polytech Fed Lausanne, SB, ITP, PHB Ecublens, CH-1015 Lausanne, Switzerland. INFM, I-80126 Naples, Italy. Univ Naples Federico II, Dipartimento Sci Fis, Complesso Univ Monte S Angelo, I-80126 Naples, Italy. (literal)
Titolo
  • Interplay between quantum confinement and electron-electron interaction in deformed silicon quantum wires (literal)
Abstract
  • In this paper we investigate quantum confinement and electron-electron correlation in silicon deformed quantum wires. Starting from the single-particle picture, which shows the possibility of localizing one electron inside the wire deformation, we build a variational ansatz for the two-electron ground state. We compare the localizing effect induced by the deformation with the Coulomb repulsion, pointing out the existence of a two-electron confined ground state, depending on the wire geometry. On varying the geometrical parameters characterizing the wire deformation, it is possible to switch from structures dominated by the localization to structures in which the increase of the available volume makes the Coulomb contribution very relevant, as for ordinary quantum dots. The effects induced by the dielectric mismatch between the wire and the surrounding medium are included and discussed. (literal)
Editore
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Editore di
Insieme di parole chiave di
data.CNR.it