http://www.cnr.it/ontology/cnr/individuo/prodotto/ID260225
Electron-electron correlation in silicon anisotropic quantum dots (Articolo in rivista)
- Type
- Label
- Electron-electron correlation in silicon anisotropic quantum dots (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssa.200306539 (literal)
- Alternative label
Cantele, G and Ninno, D and Iadonisi, G (2003)
Electron-electron correlation in silicon anisotropic quantum dots
in Physica status solidi. A, Applied research; WILEY-V C H VERLAG GMBH,, D-69451 WEINHEIM, (Germania)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cantele, G and Ninno, D and Iadonisi, G (literal)
- Pagina inizio
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- 3rd International Conference on Porous Semiconductors: Science and Technology, TENERIFE, SPAIN, MAR 10-15, 2002 (literal)
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- http://onlinelibrary.wiley.com/doi/10.1002/pssa.200306539/abstract (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Cantele, G (Reprint Author), INFM, Via Cintia,Complesso Univ Monte S Angelo, I-80126 Naples, Italy. INFM, I-80126 Naples, Italy. Univ Naples Federico 2, Dipartimento Sci Fis, I-80126 Naples, Italy. (literal)
- Titolo
- Electron-electron correlation in silicon anisotropic quantum dots (literal)
- Abstract
- In this paper we study the electron-electron correlation in silicon anisotropic quantum dots. A variational approach to the problem of the quantum confinement of two electrons in an ellipsoidal quantum dot is presented. All the calculations are done as a function of the dot aspect ratio, showing how the Coulomb repulsion and dielectric effects (related to the dielectric mismatch between the dot and the surrounding medium) give rise to shape-dependent correlation effects. The energy needed to add a second electron to the ellipsoidal quantum dot is calculated and discussed as well. (literal)
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