A theory for semiconductor nanostructure reactivity to gas environment (Articolo in rivista)

Type
Label
  • A theory for semiconductor nanostructure reactivity to gas environment (Articolo in rivista) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0925-4005(00)00441-X (literal)
Alternative label
  • Ninno, D and Iadonisi, G and Buonocore, F and Cantele, G and Di Francia, G (2000)
    A theory for semiconductor nanostructure reactivity to gas environment
    in Sensors and actuators. B, Chemical (Print); ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ninno, D and Iadonisi, G and Buonocore, F and Cantele, G and Di Francia, G (literal)
Pagina inizio
  • 17 (literal)
Pagina fine
  • 21 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Eurosensors XIII Meeting, THE HAGUE, NETHERLANDS, SEP 12-15, 1999 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 68 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ninno, D (Reprint Author), Univ Naples Federico II, INFM, Complesso Univ Monte S Angelo, Via Cintia, I-80126 Naples, Italy. Univ Naples Federico II, INFM, Complesso Univ Monte S Angelo, I-80126 Naples, Italy. Univ Naples Federico II, Dipartimento Sci Fis, Complesso Univ Monte S Angelo, I-80126 Naples, Italy. ENEA, CRIF Loc Granatello, I-80055 Portici, Italy. (literal)
Titolo
  • A theory for semiconductor nanostructure reactivity to gas environment (literal)
Abstract
  • A theoretical model has been developed to link the nanostructure geometry of porous silicon to its optical properties. Light emission and absorption energies have been calculated within a variational scheme, which includes a position-dependent boundary condition that reflects the surface chemistry. We show that the results of our measurements of both the photoluminescence (PL) quenching and peak position shift in the presence of oxygen can be accounted for by the theory. The model can be considered as a first building block of a general theory governing the functioning of semiconductor nanostructure-based gas sensors. (C) 2000 Elsevier Science S.A. All rights reserved. (literal)
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