The role of quantum confinement in porous silicon gas sensors (Contributo in atti di convegno)

Type
Label
  • The role of quantum confinement in porous silicon gas sensors (Contributo in atti di convegno) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1142/9789812792013_0023 (literal)
Alternative label
  • Ninno, D and Buonocore, F and Cantele, G and Iadonisi, G and Di Francia, G (2000)
    The role of quantum confinement in porous silicon gas sensors
    in 5th Italian Conference on Sensors and Microsystems, Univ Lecce, Lecce, ITALY, FEB 12-16, 2000
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ninno, D and Buonocore, F and Cantele, G and Iadonisi, G and Di Francia, G (literal)
Pagina inizio
  • 134 (literal)
Pagina fine
  • 138 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • 5th Italian Conference on Sensors and Microsystems, Univ Lecce, Lecce, ITALY, FEB 12-16, 2000 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.worldscientific.com/doi/abs/10.1142/9789812792013_0023 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • SENSORS AND MICROSYSTEMS (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Consiglio Nazionale delle Ricerche (CNR) University of Naples Federico II (literal)
Titolo
  • The role of quantum confinement in porous silicon gas sensors (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 981-02-4487-8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • DiNatale, C; DAmico, A; Siciliano, P (literal)
Abstract
  • Quantum confinement in nanostructured porous silicon is strongly affected by surface geometry irregularities. We have developed a method based on a variational principle for calculating volume and surface electronic states in such structures. Modelling the gas-surface interaction with the variation of the confining potential, we give a clear indication that the photoluminescence may be used as a sensing signal. A new mechanism for donor (acceptor) impurities ionization is suggested and the implication for the charge transport discussed. Finally, we show that the nanostructure surface geometrical irregularities induce a new type of carrier surface trapping which may significantly enhance the gas reactivity. (literal)
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