Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1364/OE.20.012599 (literal)

Alternative label

• Maurizio Casalino and Giuseppe Coppola and Mario Iodice and Ivo Rendina and Luigi Sirleto (2012)
  Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm
  in Optics express; Optical Society of America, Washington (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Maurizio Casalino and Giuseppe Coppola and Mario Iodice and Ivo Rendina and Luigi Sirleto (literal)

Pagina inizio

• 12599 (literal)

Pagina fine

• 12609 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.opticsexpress.org/abstract.cfm?URI=oe-20-11-12599 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 20 (literal)

Rivista

• Optics express (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 11 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per la Microelettronica e Microsistemi (IMM) - Consiglio Nazionale delle Ricerche - Sez. Napoli Italy (literal)

Titolo

• Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm (literal)

Abstract

• In this paper, design, fabrication and characterization of an all-silicon photodetector (PD) at 1550 nm, have been reported. Our device is a surface-illuminated PD constituted by a Fabry-Perot microcavity incorporating a Cu/p-Si Schottky diode. Its absorption mechanism, based on the internal photoemission effect (IPE), has been enhanced by critical coupling condition. Our experimental findings prove a peak responsivity of 0.063 mA/W, which is the highest value obtained in a surface-illuminated IPE-based Si PD around 1550 nm. Finally, device capacitance measurements have been carried out demonstrating a capacitance < 5 pF which has the potential for GHz operation subject to a reduction of the series resistance of the ohmic contact. (literal)

Editore

• Optical Society of America (Editore)

Prodotto di

• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• IVO RENDINA (Unità di personale interno)
• LUIGI SIRLETO (Persona)
• MAURIZIO CASALINO (Persona)
• GIUSEPPE COPPOLA (Persona)
• MARIO IODICE (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi optoelettronici in silicio e tecnologie compatibili (MD.P05.014.001) (Modulo)

Autore CNR di

• MARIO IODICE (Unità di personale interno)
• MAURIZIO CASALINO (Persona)
• LUIGI SIRLETO (Persona)
• IVO RENDINA (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Optics express (Rivista)

Editore di

• Optical Society of America (Editore)

Insieme di parole chiave di

• Parole chiave di "Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550 nm" (Insieme di parole chiave)