Growth, optical, and electrical properties of silicon films produced by the metal-induced crystallization process (Articolo in rivista)

Type
Label
  • Growth, optical, and electrical properties of silicon films produced by the metal-induced crystallization process (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1007/s11051-011-0444-6 (literal)
Alternative label
  • Mohiddon, M. A.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Dalba, G.; Rocca, F. (2011)
    Growth, optical, and electrical properties of silicon films produced by the metal-induced crystallization process
    in Journal of nanoparticle research; Kluwer Academic Publishers, Dordrecht (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mohiddon, M. A.; Naidu, K. Lakshun; Krishna, M. Ghanashyam; Dalba, G.; Rocca, F. (literal)
Pagina inizio
  • 5999 (literal)
Pagina fine
  • 6004 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • ISSN 1388-0764 (Print) 1572-896X (Online) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.springerlink.com/content/n203670591177116/ (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 13 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • DOI 10.1007/s11051-011-0444-6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • Article : From the issue entitled \"Special Issue: Nanostructured Materials 2010\" (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • University of Hyderabad; University of Trento; IFN CNR (literal)
Titolo
  • Growth, optical, and electrical properties of silicon films produced by the metal-induced crystallization process (literal)
Abstract
  • Amorphous Si (a-Si) and Ni films were deposited by electron beam evaporation on to borosilicate glass (BSG) substrate maintained at ambient temperature. The BSG/a-Si/Ni stack was subjected to post deposition annealing in air at various temperatures from 200 to 500 A degrees C for 1 h. Electron diffraction was employed to characterize the crystallographic phases appearing on the stacks that were depending on initial conditions. Clear evidence of the formation of hexagonal Si and fcc NiSi(2) was shown by TEM. In parallel, an increase of refraction index was observed. Electrical resistivity measurements showed that resistance is of the order of kilo ohms in the as-deposited films, increasing sharply to giga ohms in films annealed at T higher than 300 A degrees C. A large band gap of 2.23 eV which is the combined contribution from a-Si, wurtzite-Si, and Ni silicide phases, is observed. (literal)
Editore
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Editore di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it