Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: an upgrade setup for combined XAS and XRD measurements (Articolo in rivista)

Type
Label
  • Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: an upgrade setup for combined XAS and XRD measurements (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1080/08957950903549501 (literal)
Alternative label
  • Coppari, F. and Di Cicco, A. and Principi, E. and Trapananti, A. and Pinto, N. and Polian, A. and Chagnot, S. and Congeduti, A. (2010)
    Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: an upgrade setup for combined XAS and XRD measurements
    in High pressure research
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Coppari, F. and Di Cicco, A. and Principi, E. and Trapananti, A. and Pinto, N. and Polian, A. and Chagnot, S. and Congeduti, A. (literal)
Pagina inizio
  • 28 (literal)
Pagina fine
  • 34 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 30 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Paris 06, CNRS, IMPMC, UMR 7590, F-75015 Paris, France Univ Camerino, Dipartimento Fis, CNISM, CNR INFM SOFT, I-62032 Camerino, MC, Italy Sincrotrone Trieste, I-34012 Trieste, Italy Synchrotron Soleil, F-91192 Gif Sur Yvette, France (literal)
Titolo
  • Combination of optical and X-ray techniques in the study of amorphous semiconductors under high pressure: an upgrade setup for combined XAS and XRD measurements (literal)
Abstract
  • X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD) are complementary techniques whose combination is a powerful tool of investigation of matter under extreme conditions (high pressure, high temperature). The standard setup at the ODE beamline (Soleil Synchrotron) has been modified in order to allow the performance of simultaneous XAS/XRD measurements on the same sample. These techniques, together with Raman spectroscopy measurements, were applied to the study of pressure-induced phase transitions of amorphous silicon-germanium alloy (a-SixGe1-x, with x=0.75) using a membrane diamond anvil cell as the pressure device. (literal)
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