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Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors (Articolo in rivista)

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Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors (Articolo in rivista) (literal)

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Lorenzo Lugani1, Jean-Francois Carlin1, Marcel A. Py1, Denis Martin1, Francesca Rossi2, Giancarlo Salviati2, Patrick Herfurth3, Erhard Kohn3, Jurgen Blasing4, Alois Krost4, and Nicolas Grandjean1 (2013)
Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors
in Journal of applied physics; AMER INST PHYSICS, CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 (Stati Uniti d'America)
(literal)

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Lorenzo Lugani1, Jean-Francois Carlin1, Marcel A. Py1, Denis Martin1, Francesca Rossi2, Giancarlo Salviati2, Patrick Herfurth3, Erhard Kohn3, Jurgen Blasing4, Alois Krost4, and Nicolas Grandjean1 (literal)

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1 ICMP, ? Ecole Polytechnique F?ed?erale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland 2 IMEM-CNR, Parco Area delle Scienze, 37/A, I-43010 Parma, Italy 3 Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein Allee 45, 89081 Ulm, Germany 4 Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg, 39106 Magdeburg, Germany (literal)

Titolo

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors (literal)

Abstract

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm2/V s) and low sheet resistivity (356X/w) is achieved at room temperature for a buffer thickness as low as ?0.1 lm. It is shown that despite a huge dislocation density imposed by this thin buffer, surface roughness is the main factor which affects the transport properties. In addition, sapphire surface nitridation is found to drastically affect the properties of the InAlN/GaN 2DEG. Eventually, HEMTs are processed from these heterostructures. Maximum current densities of 0.35 A/mm and current on-off ratios higher than 109 are measured, which make them suitable for high performance GaN based sensing in harsh environments. (literal)

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