Extended transfer matrix modeling of an erbium-doped cavity with SiO2/TiO2 Bragg reflectors (Articolo in rivista)

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  • Extended transfer matrix modeling of an erbium-doped cavity with SiO2/TiO2 Bragg reflectors (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.optmat.2008.10.028 (literal)
Alternative label
  • Y.G. Boucher, A. Chiasera, M. Ferrari, and G.C. Righini (2009)
    Extended transfer matrix modeling of an erbium-doped cavity with SiO2/TiO2 Bragg reflectors
    in Optical materials (Amst., Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Y.G. Boucher, A. Chiasera, M. Ferrari, and G.C. Righini (literal)
Pagina inizio
  • 1306 (literal)
Pagina fine
  • 1309 (literal)
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  • 31 (literal)
Rivista
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  • doi:10.1016/j.optmat.2008.10.028 (literal)
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  • 4 (literal)
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  • 9 (literal)
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  • Pubblicazione su rivista ISI-JCR (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
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  • Y.G. Boucher is at ENIB/RESO, CS 73862, F-29238 Brest Cedex 3, France A. Chiasera and M. Ferrari are at CNR-IFN, CSMFO, via Sommarive 14, I-38050 Povo, Trento, Italy G.C. Righini is at CNR, Department of Materials and Devices, 00185 Roma and IFAC, 50019 Sesto Fiorentino, Italy (literal)
Titolo
  • Extended transfer matrix modeling of an erbium-doped cavity with SiO2/TiO2 Bragg reflectors (literal)
Abstract
  • Starting from the measured parameters of multilayer microcavities activated by Er3+ ion, we developed a comprehensive model based on extended (3 x 3) transfer matrix formalism including sources. The cavity, fabricated by rf-sputtering technique, was constituted by an Er3+-activated SiO2 active layer inserted between two six-pair SiO2/TiO2 distributed Bragg reflectors. Near infrared transmittance spectra evidence the presence of a stop-band from 1350 to 1850 nm and a cavity resonance centered at 1537 nm. Intensity enhancement and narrowing of the 4I13/2 à 4I15/2 emission band of Er3+ ion were observed, owing to the cavity effect. A cavity quality factor of 171 was achieved. All observations show excellent agreement with transfer matrix simulations, leading to improvements of the devices design operating in laser regime. (literal)
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