Evidence for relaxed and high-quality growth of GaN on SiC(0001) (Articolo in rivista)

Type
Label
  • Evidence for relaxed and high-quality growth of GaN on SiC(0001) (Articolo in rivista) (literal)
Anno
  • 1999-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.123327 (literal)
Alternative label
  • Boscherini, F (Boscherini, F); Lantier, R (Lantier, R); Rizzi, A (Rizzi, A); D'Acapito, F (D'Acapito, F); Mobilio, S (Mobilio, S) (1999)
    Evidence for relaxed and high-quality growth of GaN on SiC(0001)
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Boscherini, F (Boscherini, F); Lantier, R (Lantier, R); Rizzi, A (Rizzi, A); D'Acapito, F (D'Acapito, F); Mobilio, S (Mobilio, S) (literal)
Pagina inizio
  • 3308 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 74 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • cnr, infm (literal)
Titolo
  • Evidence for relaxed and high-quality growth of GaN on SiC(0001) (literal)
Abstract
  • By using polarization-dependent x-ray absorption spectroscopy at the Ga edge, we study the growth of GaN on SiC(0001) in the thickness range 0.7-150 nm. We find that the growth is always relaxed (i.e., nonpseudomorphic) even for the thinnest epilayers, i.e., below the expected critical thickness. No evidence is found for a mixed Ga/Si interface plane, while a C/N mixed interface plane cannot be ruled out. The results are discussed with reference to the electronic structure of the SiC/GaN heterojunction and in particular to band offsets and strain-induced piezoelectric polarization (literal)
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