Epitaxy and strain in the growth of GaN on AlN: A polarized x-ray absorption spectroscopy study (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Epitaxy and strain in the growth of GaN on AlN: A polarized x-ray absorption spectroscopy study (Articolo in rivista) (literal)

Anno

• 2002-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.66.205411 (literal)

Alternative label

• d'Acapito, F (d'Acapito, F); Boscherini, F (Boscherini, F); Mobilio, S (Mobilio, S); Rizzi, A (Rizzi, A); Lantier, R (Lantier, R) (2002)
  Epitaxy and strain in the growth of GaN on AlN: A polarized x-ray absorption spectroscopy study
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• d'Acapito, F (d'Acapito, F); Boscherini, F (Boscherini, F); Mobilio, S (Mobilio, S); Rizzi, A (Rizzi, A); Lantier, R (Lantier, R) (literal)

Pagina inizio

• 205411 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 66 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 20 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• cnr (literal)

Titolo

• Epitaxy and strain in the growth of GaN on AlN: A polarized x-ray absorption spectroscopy study (literal)

Abstract

• We present a study of the local structure of 7-8 nm thick GaN epilayers deposited on AlN by molecular beam epitaxy at temperatures ranging between 620 and 790 degreesC by x-ray absorption spectroscopy, exploiting the polarization dependence of the technique. Both the near-edge and extended spectra suggest that atomic intermixing between GaN and AlN takes place at most for one monolayer. An interpretation of the near-edge spectra of wurtzite GaN and of the variation with the sample orientation in the framework of multiple scattering theory is provided. Values of the in-plane and out-of-plane strain due to heteroepitaxial growth are obtained from the interatomic distances in the second coordination shell around Ga; we compare the obtained values to literature values of the elastic constants, finding good agreement with most of them. (literal)

Prodotto di

• Sviluppo di strumentazione e di metodologie sperimentali avanzate per lo studio delle proprieta strutturali dei materiali con raggi X da sincrotrone (MD.P04.007.001) (Modulo)

Autore CNR

• FRANCESCO D'ACAPITO (Persona)

Incoming links:

Autore CNR di

• FRANCESCO D'ACAPITO (Persona)

Prodotto

• Sviluppo di strumentazione e di metodologie sperimentali avanzate per lo studio delle proprieta strutturali dei materiali con raggi X da sincrotrone (MD.P04.007.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)