http://www.cnr.it/ontology/cnr/individuo/prodotto/ID24929
Hot carrier effects in p-channel polycrystalline silicon thin film transistors (Articolo in rivista)
- Type
- Label
- Hot carrier effects in p-channel polycrystalline silicon thin film transistors (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.2378587 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- L. Mariucci; A. Valletta; P. Gaucci; G. Fortunato; F. Templier (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IFN-CNR, CEA-LETI (literal)
- Titolo
- Hot carrier effects in p-channel polycrystalline silicon thin film transistors (literal)
- Abstract
- The effects of hot carriers on the electrical characteristics of polycrystalline silicon p-channel thin
film transistors have been analyzed, combining experimental data and numerical simulations. The
transfer characteristics showed minor variations upon application of prolonged bias stress, while the
output characteristics presented a reduction of kink effect. These results have been explained by
using a self-consistent model based on the trapping of injected hot electrons. The authors' charge
injection model provided a precise evaluation of the extension of the trapped charge regions, at both
front and back interfaces. By using such trapped charge distributions, it was possible to reproduce
the output characteristics variations as well as the minor on-current increase observed in the transfer
characteristics after bias stress. (literal)
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