Controlling Field Effect Mobility in Pentacene Based Transistors by Supersonic Molecular Beam Deposition (Articolo in rivista)

Type
Label
  • Controlling Field Effect Mobility in Pentacene Based Transistors by Supersonic Molecular Beam Deposition (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2187494 (literal)
Alternative label
  • T. Toccoli (1); A. Pallaoro (1); N. Coppedè (1); S. Iannotta (1); F. De Angelis (2); L. Mariucci (2); G. Fortunato (2) (2006)
    Controlling Field Effect Mobility in Pentacene Based Transistors by Supersonic Molecular Beam Deposition
    in Applied physics letters; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • T. Toccoli (1); A. Pallaoro (1); N. Coppedè (1); S. Iannotta (1); F. De Angelis (2); L. Mariucci (2); G. Fortunato (2) (literal)
Pagina inizio
  • 132106-1 (literal)
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  • Selected for April, 10, 2006 issue of Virtual Journal of Nanoscale Science and Technology http://www.vjnano.org (literal)
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  • http://link.aip.org/link/applab/v88/i13/p132106/s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 88 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 13 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) IFN-CNR, Istituto Fotonica e Nanotecnologie, ITC Division, 38050 Trento, Italy (2) IFN-CNR, Istituto Fotonica e Nanotecnologie, 00156 Roma, Italy (literal)
Titolo
  • Controlling Field Effect Mobility in Pentacene Based Transistors by Supersonic Molecular Beam Deposition (literal)
Abstract
  • We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (KE). The major role played by KE is in achieving highly ordered and flat films. In the range KE?3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor ?5. The highest value (1.0 cm2 V-1 s-1) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at KE>6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at KE?5.5 eV. (literal)
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