Why are sputter deposited Nd1+xBa2-xCu3O7-delta thin films flatter than NdBa2Cu3O7-delta films? (Articolo in rivista)

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  • Why are sputter deposited Nd1+xBa2-xCu3O7-delta thin films flatter than NdBa2Cu3O7-delta films? (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1421622 (literal)
Alternative label
  • BALS, S and VAN TENDELOO, G and SALLUZZO, M and MAGGIO-APRILE, I (2001)
    Why are sputter deposited Nd1+xBa2-xCu3O7-delta thin films flatter than NdBa2Cu3O7-delta films?
    in Applied physics letters; Acoustical Society Of America, American Institute Of Physics, Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • BALS, S and VAN TENDELOO, G and SALLUZZO, M and MAGGIO-APRILE, I (literal)
Pagina inizio
  • 3660 (literal)
Pagina fine
  • 3662 (literal)
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  • http://dx.doi.org/10.1063/1.1421622 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 79 (literal)
Rivista
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  • 3 (literal)
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  • 22 (literal)
Note
  • Google Scholar (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • S. Balsa) and G. Van Tendeloo Electron Microscopy for Materials Research (EMAT), University of Antwerp (RUCA), Groenenborgerlaan 171, B-2020 Antwerp, Belgium M. Salluzzo Istituto Nazionale di Fisica della Materia (INFM) and Dipartimento di Scienze Fisiche, Universita` di Napoli Federico II, I-80125 Napoli, Italy I. Maggio-Aprile De´partement de Physique de la Matie`re Condense´e, Universite´ de Gene`ve, CH-1211 Gene`ve 4, Switzerland (literal)
Titolo
  • Why are sputter deposited Nd1+xBa2-xCu3O7-delta thin films flatter than NdBa2Cu3O7-delta films? (literal)
Abstract
  • High-resolution electron microscopy and scanning tunneling microscopy have been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xCu3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inclusions. Antiphase boundaries are induced by unit cell high steps at the substrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the antiphase boundaries tend to annihilate by the insertion of extra Nd layers. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusions, also absorb the excess Nd. A correlation is made between the excess Nd and the absence of growth spirals at the surface of the Nd-rich films. (literal)
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