Antimony induced states in Sb/InP( 110) and Sb/GaAs( 110) interfaces studied by high resolution electron energy loss spectroscopy (Articolo in rivista)

Type
Label
  • Antimony induced states in Sb/InP( 110) and Sb/GaAs( 110) interfaces studied by high resolution electron energy loss spectroscopy (Articolo in rivista) (literal)
Anno
  • 1991-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/0039-6028(91)90983-Y (literal)
Alternative label
  • Maria Grazia Betti, M. Pedio, U. de1 Pennino and Carlo Mariani (1991)
    Antimony induced states in Sb/InP( 110) and Sb/GaAs( 110) interfaces studied by high resolution electron energy loss spectroscopy
    in Surface science letters; Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Maria Grazia Betti, M. Pedio, U. de1 Pennino and Carlo Mariani (literal)
Pagina inizio
  • 209 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 251/252 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto di Struttura della Mater& CNR, via E. Fermi 38, I-00044 Frascati, Italy Dipartimenta di Fisk, Universitd di Modena, via G. Campi 213/A, I-41100 Madena, Italy (literal)
Titolo
  • Antimony induced states in Sb/InP( 110) and Sb/GaAs( 110) interfaces studied by high resolution electron energy loss spectroscopy (literal)
Abstract
  • A high resolution electron energy loss investigation of the electronic properties of Sb/InP{llO) and Sb/GaAs(llO) interfaces. is presented. We compare data relative to a well ordered Sb monolayer with those correspondjng to clean se~~nductor surfaces, focusing the attention on the electronic transitions involving the Sb-induced states. In particular the existence of the Sb induced empty state 57. when the ordered Sb monolayer is formed, has been experimentally proved. (literal)
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