Modeling of tunneling P/E for nanocrystal memories (Articolo in rivista)

Type
Label
  • Modeling of tunneling P/E for nanocrystal memories (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • C. Monzio Compagnoni, D. Ielmini, A.S. Spinelli, A. L. Lacaita (2005)
    Modeling of tunneling P/E for nanocrystal memories
    in I.E.E.E. transactions on electron devices
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Monzio Compagnoni, D. Ielmini, A.S. Spinelli, A. L. Lacaita (literal)
Pagina inizio
  • 569 (literal)
Pagina fine
  • 576 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 52 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Modeling of tunneling P/E for nanocrystal memories (literal)
Abstract
  • This paper presents a detailed study of the program/erase (P/E) dynamics under uniform tunneling for nanocrystal (NC) memories. Calculating the potential profile and the tunneling currents across the dielectric barriers, we evaluate NC charging and discharging transients during P/E operations. The calculated P/E windows and times compare well with experimental data for memory cells with different oxide thicknesses. The model accounts for the typical features of threshold voltage (VT) shift as a function of applied gate voltage, and can be used as a valuable tool for optimizing the cell geometry and parameters for maximum performance. (literal)
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