Parasitic reset in the programming transient of PCMs (Articolo in rivista)

Type
Label
  • Parasitic reset in the programming transient of PCMs (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • D. Ielmini, D. Mantegazza, A. L. Lacaita, A. Pirovano and F. Pellizzer (2005)
    Parasitic reset in the programming transient of PCMs
    in IEEE electron device letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Ielmini, D. Mantegazza, A. L. Lacaita, A. Pirovano and F. Pellizzer (literal)
Pagina inizio
  • 799 (literal)
Pagina fine
  • 801 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 26 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Titolo
  • Parasitic reset in the programming transient of PCMs (literal)
Abstract
  • We studied the programming dynamics in phase change memory cells. It is shown that programming in stand-alone cells is strongly affected by the parasitic capacitance in the measurement setup, leading to a current overshoot after threshold switching of the amorphous chalcogenide. This results in a parasitic melting and quenching of the active material, affecting the current distribution during program and the final phase distribution in the active material. The relevance of this artefact for real-device operation is discussed with reference to the value of the parasitic capacitance. (literal)
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