http://www.cnr.it/ontology/cnr/individuo/prodotto/ID24660

Doped silicon and NIS junctions for bolometer applications (Articolo in rivista)

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Label

Doped silicon and NIS junctions for bolometer applications (Articolo in rivista) (literal)

Anno

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Alternative label

R. Leoni, B. Buonomo, M.G. Castellano, F. Mattioli, G. Torrioli, L. Di Gaspare, F. Evangelisti (2004)
Doped silicon and NIS junctions for bolometer applications
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

R. Leoni, B. Buonomo, M.G. Castellano, F. Mattioli, G. Torrioli, L. Di Gaspare, F. Evangelisti (literal)

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Rivista

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Istituto di Fotonica e Nanotecnologie del CNR, Via Cineto Romano 42, Roma 00156, Italy Dipartimento di Fisica Universit ! a di Roma TRE and INFM, Roma, Italy (literal)

Titolo

Abstract

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0:3 K: We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron-phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers. (literal)

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