THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1 (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1 (Articolo in rivista) (literal)

Anno

• 1991-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/0039-6028(91)90352-S (literal)

Alternative label

• HEUN, S (HEUN, S); FALTA, J (FALTA, J); HENZLER, M (HENZLER, M) (1991)
  THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1
  in Surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• HEUN, S (HEUN, S); FALTA, J (FALTA, J); HENZLER, M (HENZLER, M) (literal)

Pagina inizio

• 132 (literal)

Pagina fine

• 140 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 243 (literal)

Rivista

• Surface science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-3 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• UNIV HANOVER,INST FESTKORPERPHYS,APPELSTR 2,W-3000 HANNOVER,GERMANY. (literal)

Titolo

• THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1 (literal)

Abstract

• Epitaxial growth of Si on Si(100)-2 x 1 has been studied in a temperature range from 290 to 820 K using spot profile analysis of LEED. Intensity and profile of several diffraction spots at different energies have been measured simultaneously with deposition in UHV at a rate of about 1 monolayer in 3 min. During growth at 640 K the surface is rough, there are 4 layers growing simultaneously. The anisotropy of the broadening of the 00-beam was taken into account for the determination of the layer distribution. The islands are elongated parallel to the dimer-rows. Already during the deposition of the first monolayer the final shape of the islands is formed. The average island size during layer-by-layer growth is 30 x 10 atoms. For T = 290 to 400 K deposited atoms cannot cross step edges, so that surface roughness increase rapidly during growth. For T > 750 K the crystal grows via step-propagation. (literal)

Prodotto di

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Autore CNR

• STEFAN HEUN (Unità di personale interno)

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• Parole chiave di "THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1" (Insieme di parole chiave)

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Autore CNR di

• STEFAN HEUN (Unità di personale interno)

Prodotto

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Surface science (Rivista)

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• Parole chiave di "THE INITIAL-STAGES OF EPITAXIAL-GROWTH OF SILICON ON SI(100)-2 X-1" (Insieme di parole chiave)