Preliminary spectromicroscopic measurements of self-organized InAs nanocrystals by SPELEEM (Articolo in rivista)

Type
Label
  • Preliminary spectromicroscopic measurements of self-organized InAs nanocrystals by SPELEEM (Articolo in rivista) (literal)
Anno
  • 1999-01-01T00:00:00+01:00 (literal)
Alternative label
  • Watanabe, Y (Watanabe, Y); Heun, S (Heun, S); Schmidt, T (Schmidt, T); Prince, KC (Prince, KC) (1999)
    Preliminary spectromicroscopic measurements of self-organized InAs nanocrystals by SPELEEM
    in Japanese journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Watanabe, Y (Watanabe, Y); Heun, S (Heun, S); Schmidt, T (Schmidt, T); Prince, KC (Prince, KC) (literal)
Pagina inizio
  • 556 (literal)
Pagina fine
  • 559 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 38 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] NTT, Basic Res Labs, Atsugi, Kanagawa 24301, Japan [ 2 ] Sincrotrone Trieste, I-34012 Trieste, Italy (literal)
Titolo
  • Preliminary spectromicroscopic measurements of self-organized InAs nanocrystals by SPELEEM (literal)
Abstract
  • Preliminary spectromicroscopic measurements of self-organized InAs nanocrystals by soft x-ray photoemission electron microscopy (XPEEM) are presented. The InAs nanocrystals were fabricated on Se-terminated GaAs(100) surfaces by molecular beam epitaxy (MBE) in a dedicated chamber in Tsukuba, Japan. The measurements were performed with the Spectroscopic Photo Emission and Low Energy Electron Microscope (SPELEEM) of the Technical University of Clausthal at beamline 6.2LL at the synchrotron radiation light source ELETTRA in Trieste, Italy. The samples were protected during transfer in air to ELETTRA by an As capping layer deposited in-situ in the MBE chamber. The capping layer was desorbed in the SPELEEM sample preparation chamber. We performed tests on As-capping and decapping of InAs nanocrystals by synchrotron radiation photoelectron spectroscopy at the Photon Factory, Tsukuba, Japan. We found that the electronic properties of the sample were not changed by capping and decapping. Low energy electron microscopy and XPEEM measurements proved the feasibility of spectromicroscopic experiments on InAs nanocrystals. (literal)
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