Cathodoluminescence study of the Y-0 emission from ZnSe films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Cathodoluminescence study of the Y-0 emission from ZnSe films (Articolo in rivista) (literal)

Anno

• 2000-01-01T00:00:00+01:00 (literal)

Alternative label

• Mita, T (Mita, T); Yamamoto, N (Yamamoto, N); Mitsui, T (Mitsui, T); Heun, S (Heun, S); Franciosi, A (Franciosi, A); Bonard, JM (Bonard, JM) (2000)
  Cathodoluminescence study of the Y-0 emission from ZnSe films
  in Diffusion and defect data, solid state data. Part B, Solid state phenomena
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mita, T (Mita, T); Yamamoto, N (Yamamoto, N); Mitsui, T (Mitsui, T); Heun, S (Heun, S); Franciosi, A (Franciosi, A); Bonard, JM (Bonard, JM) (literal)

Pagina inizio

• 89 (literal)

Pagina fine

• 93 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 78-79 (literal)

Rivista

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Tokyo Inst Technol, Dept Mat Sci, Meguro Ku, Tokyo 1528551, Japan [ 2 ] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan [ 3 ] INFM, Lab Nazl TASC, Area Ric, IT-34012 Trieste, Italy [ 4 ] Ecole Polytech Fed Lausanne, Dept Phys, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland (literal)

Titolo

• Cathodoluminescence study of the Y-0 emission from ZnSe films (literal)

Abstract

• The Y-0 emission from an MBE grown sample of ZnSe/GaAs has been studied by TEM-CL technique. Thin films were prepared by removing the GaAs substrate by ion milling. Misfit dislocations were directly observed by TEM, and examined by monochromatic CL imaging. It was found that the Y-0 emission comes from threading dislocation parts, bent parts, and tie points of the misfit dislocations with Burgers vectors of 1/2 < 110 >. This suggests that the Y-0 emission originates from an electronic state formed at the localized structure of the misfit dislocations. However, some of the tie points are not luminescent, though they have the same character as that of the luminescent ones. Therefore we have to consider an additional factor to explain the behavior of the Y-0 emission, such as formation of a point defect state combined with dislocation core. (literal)

Prodotto di

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Autore CNR

• STEFAN HEUN (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Cathodoluminescence study of the Y-0 emission from ZnSe films" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• STEFAN HEUN (Unità di personale interno)

Prodotto

• Sintesi e studio delle proprieta' strutturali, ottiche ed elettroniche di sistemi aventi almeno una dimensione nanometrica (MD.P06.018.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diffusion and defect data, solid state data. Part B, Solid state phenomena (Rivista)

Insieme di parole chiave di

• Keywords of "Cathodoluminescence study of the Y-0 emission from ZnSe films" (Insieme di parole chiave)