Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001) (Articolo in rivista)

Type
Label
  • Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001) (Articolo in rivista) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.63.125335 (literal)
Alternative label
  • Heun, S (Heun, S); Watanabe, Y (Watanabe, Y); Ressel, B (Ressel, B); Bottomley, D (Bottomley, D); Schmidt, T (Schmidt, T); Prince, KC (Prince, KC) (2001)
    Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001)
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Heun, S (Heun, S); Watanabe, Y (Watanabe, Y); Ressel, B (Ressel, B); Bottomley, D (Bottomley, D); Schmidt, T (Schmidt, T); Prince, KC (Prince, KC) (literal)
Pagina inizio
  • 125335 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 63 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Sincrotrone Trieste, I-34012 Trieste, Italy [ 2 ] NTT, Basic Res Labs, Atsugi, Kanagawa 24301, Japan (literal)
Titolo
  • Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001) (literal)
Abstract
  • Core-level spectra of individual heteroepitaxial nanocrystals were measured with a spectroscopic photoemission and low-energy electron microscope that allows laterally resolved photoemission spectroscopy. The nanocrystals were obtained by depositing nominally 2 monolayers (ML) of InAs on a Se-tenninated GaAs(001) surface. The Se-termination of GaAs results in the formation of a 2-3-ML-thick film of Ga2Se3 on top of bulk GaAs. During heteroepitaxy the InAs reacts with the Ga,Se,: A phase separation takes place on the anion sublattice, while an alloying takes place on the cation sublattice. During the initial stages of growth, a submonolayer-thick wetting layer of In(x)Ga(1-x)A(s) is formed that is covered by (InyGa1-y)(2)Se-3. (InyGa1-y)(2)Se-3-covered InAs nanocrystals are formed on this surface. (literal)
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