Spectro-microscopy of ultra-thin SiN films on Si (111) (Articolo in rivista)

Type
Label
  • Spectro-microscopy of ultra-thin SiN films on Si (111) (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/S0168-583X(02)01678-6 (literal)
Alternative label
  • Schmidt, T (Schmidt, T); Clausen, T (Clausen, T); Gangopadhyay, S (Gangopadhyay, S); Falta, J (Falta, J); Heun, S (Heun, S) (2003)
    Spectro-microscopy of ultra-thin SiN films on Si (111)
    in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Schmidt, T (Schmidt, T); Clausen, T (Clausen, T); Gangopadhyay, S (Gangopadhyay, S); Falta, J (Falta, J); Heun, S (Heun, S) (literal)
Pagina inizio
  • 79 (literal)
Pagina fine
  • 84 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 200 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany [ 2 ] ELETTRA Synchrotron Light Source, I-34012 Trieste, Italy (literal)
Titolo
  • Spectro-microscopy of ultra-thin SiN films on Si (111) (literal)
Abstract
  • Silicon nitride layers grown on Si (111) by atomic nitrogen exposure at elevated substrate temperatures have been investigated in situ by photoemission spectro-microsopy. From the X-ray photo emission spectra taken at various sample areas, the chemical composition of samples grown at 800 degreesC is found to be homogenous all over the surface, with a stoichiometry according to Si3N4. Due to attenuation of the photo electrons, the images also provide information about the morphology of the nitride films. For 800 degreesC, a smooth film is observed, whereas for growth temperatures exceeding 900 degreesC, an increased roughness is observed. (literal)
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