Open issues for lasing at 1.3 ?m in MOCVD-grown quantum dots (Articolo in rivista)

Type
Label
  • Open issues for lasing at 1.3 ?m in MOCVD-grown quantum dots (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • De Giorgi, M. , Passaseo, A., Maruccio, G., De Vittorio, M., Todaro, M.T., Rinaldi, R., Cingolani, R. (2003)
    Open issues for lasing at 1.3 ?m in MOCVD-grown quantum dots
    in Physica status solidi. B, Basic research
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • De Giorgi, M. , Passaseo, A., Maruccio, G., De Vittorio, M., Todaro, M.T., Rinaldi, R., Cingolani, R. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 238 (literal)
Rivista
Note
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • NNL-INFM, Dip. di Ingegneria dell'Innovazione, University of Lecce, via per Amesano, 73100 Lecce, Italy (literal)
Titolo
  • Open issues for lasing at 1.3 ?m in MOCVD-grown quantum dots (literal)
Abstract
  • A study of the carrier dynamics in MOCVD-grown InGaAs/GaAs quantum dots emitting at 1.3 ?m at room temperature has been done. The PL rise time measured as a function of the temperature shows that carrier relaxation into the QD ground state occurs within a few picoseconds due to a very efficient carrier-phonon scattering process. In spite of this very efficient carrier capture in our dots and a small temperature dependence of the quantum efficiency, which are favorable for laser applications, we show that our QDs have a very strong permanent dipole moment which prevents the emission from the ground state and the lasing at 1.3 ?m. (literal)
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