Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires (Articolo in rivista)

Type
Label
  • Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires (Articolo in rivista) (literal)
Anno
  • 1999-01-01T00:00:00+01:00 (literal)
Alternative label
  • Emiliani, V.a, Lienau, Ch.a, Hauert, M.b, Colí, G.c, DeGiorgi, M.c, Rinaldi, R.c, Passaseo, A.c, Cingolani, R.c (1999)
    Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Emiliani, V.a, Lienau, Ch.a, Hauert, M.b, Colí, G.c, DeGiorgi, M.c, Rinaldi, R.c, Passaseo, A.c, Cingolani, R.c (literal)
Pagina inizio
  • 13335 (literal)
Pagina fine
  • 13338 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 60 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 19 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Max-Born-Inst. F. Nichtlineare O., Rudower Chaussee 6, D-12489 Berlin, Germany b University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom c Unitá INFM, Department of Material Science, University of Lecce, I-73100 Lecce, Italy (literal)
Titolo
  • Near-field low-temperature photoluminescence spectroscopy of single V-shaped quantum wires (literal)
Abstract
  • We report on a near-field spectroscopic study of single V-shaped InxGa1-xAs/GaAs quantum wires. With subwavelength resolution, the emission from single InxGa1-xAs wires and connecting planar quantum wells - separated by 250 nm - are individually resolved. The contributions of both monolayer height fluctuations on a 100 nm length scale and of short range compositional disorder to the localization of excitons in V-shaped quantum wires are separately identified and their implications for far-field PL spectra discussed. An upper limit for the migration length of the photogenerated excitons within the GaAs barrier layers of 250 nm is determined (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
data.CNR.it