Planar silicon SPADs with improved photon detection efficiency (Articolo in rivista)

Type
Label
  • Planar silicon SPADs with improved photon detection efficiency (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1117/12.849664 (literal)
Alternative label
  • Gulinatti A, Panzeri F, Rech I, Maccagnani P, Ghioni M, Cova S (2010)
    Planar silicon SPADs with improved photon detection efficiency
    in Proceedings of SPIE, the International Society for Optical Engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Gulinatti A, Panzeri F, Rech I, Maccagnani P, Ghioni M, Cova S (literal)
Pagina inizio
  • 76810M-1 (literal)
Pagina fine
  • 76810M-12 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 7681 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy IMM CNR, Sez Bologna, I-40129 Bologna, Italy MPD Micro Photon Devices, I-39100 Bolzano, Italy (literal)
Titolo
  • Planar silicon SPADs with improved photon detection efficiency (literal)
Abstract
  • We will report on our advances on the development of a new planar silicon SPAD with high photon detection efficiency (PDE) and good photon timing resolution. We will show that a 10 mu m thick epitaxial layer allows for the absorption of a significant fraction of the incident photons even at the longer wavelengths, while a suitable electric field profile limits the breakdown voltage value and the timing jitter. Simulations show that the new devices can attain a PDE higher than 30% at a wavelength of 800nm. (literal)
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