Fabrication and characterization of optical planar waveguides activated by erbium ions for 1.5-¼m applications. (Abstract/Poster in convegno)

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  • Fabrication and characterization of optical planar waveguides activated by erbium ions for 1.5-¼m applications. (Abstract/Poster in convegno) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Alessandro Chiasera, Maurizio Ferrari, Luca Zampedri, Maurizio Mattarelli, Maurizio Montagna, Herve Portales, Cristiana Tosello, Sandra Dire, Stefano Pelli, Giancarlo C. Righini (2004)
    Fabrication and characterization of optical planar waveguides activated by erbium ions for 1.5-¼m applications.
    in SPIE Photonics Europe, Strasbourg (France), April 26, 2004
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alessandro Chiasera, Maurizio Ferrari, Luca Zampedri, Maurizio Mattarelli, Maurizio Montagna, Herve Portales, Cristiana Tosello, Sandra Dire, Stefano Pelli, Giancarlo C. Righini (literal)
Pagina inizio
  • 574 (literal)
Pagina fine
  • 584 (literal)
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  • 5451 (literal)
Rivista
Note
  • Scopu (literal)
  • Poster (literal)
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  • CNR-IFN, Inst. Photonics and Nanotechnologies, CSMFO Group, via Sommarive 14, 38050 Povo-Trento, Italy; Dipartimento di Fisica, INFM, CSMFO Group, via Sommarive 14, I-38050 Povo-Trento, Italy; Dipartimento di Ingegneria, Università di Trento, via Mesiano 77, I-38050 Trento, Italy; CNR-IFAC, Inst. of Appl. Physics Nello Carrara, Via Panciatichi 64, 5 0127 Firenze, Italy (literal)
Titolo
  • Fabrication and characterization of optical planar waveguides activated by erbium ions for 1.5-¼m applications. (literal)
Abstract
  • Recent results obtained for SiO2 - HfO2: Er 3+ and SiO2 - TiO2: Er3+ - Yb 3+ waveguides are presented. (100-x)SiO2 - xHfO 2 (x = 10, 20, 30, 40 mol) planar waveguides, doped with 0.01 and 0. 3 mol % Er3+ ions were prepared by sol-gel route, using dip-coating deposition on v-SiO2 substrates. The waveguides were characterized by m-line, Raman and photoluminescence spectroscopy. The spectral shape of the band assigned to the 4I13/2 -> 4I 15/2 transition does not change practically with the hafnium and erbium content. The 4I13/2 level decay curves present a single-exponential profile, with a lifetime between 5.5 and 7.1 ms, for the 0.3 mol% doped samples, and between 8.5 and 6.6 ms for the 0.01 mol% doped samples. The SiO2 - TiO2: Er3+ - Yb3+ waveguides were prepared by rf-sputtering technique. All waveguides were single-mode at 1550 nm. The losses, for the TE0 mode, were evaluated at 632.8 and 1300 nm and an attenuation coefficient equal or lower than 0.2 dB/cm was measured both at 632.8 nm and 1300 nm. The emission of 4I13/2 -> 4I15/2 of Er 3+ ion transition was observed upon excitation in the TE0 mode at 981 and 514.5 nm. Back energy transfer from Er3+ to Yb 3+ was demonstrated by measurement of Yb3+ emission upon Er3+ excitation at 514.5 nm. Photoluminescence excitation spectroscopy was used to obtain information about the effective excitation efficiency of Er3+ ions by codoping with Yb3+ ions. (literal)
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