An effective mass model for the simulation of ultra-scaled confined devices (Articolo in rivista)

Type
Label
  • An effective mass model for the simulation of ultra-scaled confined devices (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1142/S021820251250039X (literal)
Alternative label
  • Ben Abdallah, Naoufel ; Jourdana, Clement ; Pietra, Paola (2012)
    An effective mass model for the simulation of ultra-scaled confined devices
    in Mathematical models and methods in applied sciences; World Scientific, Singapore (Singapore)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ben Abdallah, Naoufel ; Jourdana, Clement ; Pietra, Paola (literal)
Pagina inizio
  • Art. 1250039 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 22 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto di Matematica Applicata & Tecnologie Informatiche del CNR, Pavia, Italy Université Toulouse 3, Inst Math Toulouse, France (literal)
Titolo
  • An effective mass model for the simulation of ultra-scaled confined devices (literal)
Abstract
  • In this paper, we present the derivation and the simulation of an effective mass model, describing the quantum motion of electrons in an ultra-scaled confined nanostructure. Due to the strong confinement, the crystal lattice is considered periodic only in the one-dimensional transport direction and an atomistic description of the entire cross-section is given. Using an envelope function decomposition, an effective mass approximation is obtained. It consists of a sequence of one-dimensional device-dependent Schrodinger equations, one for each energy band, in which quantities retaining the effects of the confinement and of the transversal crystal structure are inserted. In order to model a gate-all-around field effect transistor, self-consistent computations include the resolution, in the whole domain, of a Poisson equation describing a slowly varying macroscopic potential. Simulations of the electron transport in a simplified one-wall carbon nanotube are presented. (literal)
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