Extended point defects in crystalline materials: Ge and Si (Articolo in rivista)

Type
Label
  • Extended point defects in crystalline materials: Ge and Si (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.110.155501 (literal)
Alternative label
  • Cowern, N.E.B., Simdyankin, S.a, Ahn, C.a, Bennett, N.S.a, Goss, J.P.a, Hartmann, J.-M.b, Pakfar, A.c, Hamm, S.d, Valentin, J.e, Napolitani, E.f, De Salvador, D.f, Bruno, E.g, Mirabella, S (2013)
    Extended point defects in crystalline materials: Ge and Si
    in Physical review letters (Print); The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cowern, N.E.B., Simdyankin, S.a, Ahn, C.a, Bennett, N.S.a, Goss, J.P.a, Hartmann, J.-M.b, Pakfar, A.c, Hamm, S.d, Valentin, J.e, Napolitani, E.f, De Salvador, D.f, Bruno, E.g, Mirabella, S (literal)
Pagina inizio
  • 155501 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 110 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, United Kingdom CEA, LETI, Minatec Campus, 38054 Grenoble, France ST Microelectronics, 850 rue Jean Monnet, 38920 Crolles, France Mattson Thermal Products GmbH, Daimlerstrasse 10, 89160 Dornstadt, Germany Probion Analysis, 37 rue de Fontenay, 92220 Bagneux, France CNR-IMM-MATIS, Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy CNR-IMM-MATIS, Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy (literal)
Titolo
  • Extended point defects in crystalline materials: Ge and Si (literal)
Abstract
  • B diffusion measurements are used to probe the basic nature of self-interstitial point defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a morph. Computational modeling suggests that morphs exist in both self-interstitial and vacancylike forms, and are crucial for diffusion and defect dynamics in Ge, Si, and probably many other crystalline solids. (literal)
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