Chapter 5: Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures (Contributo in volume (capitolo o saggio))

Type

• Contributo in volume (capitolo o saggio) (Classe)
• Prodotto della ricerca (Classe)

Label

• Chapter 5: Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures (Contributo in volume (capitolo o saggio)) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/B978-0-444-53099-8.00005-1 (literal)

Alternative label

• Laura Lazzarini 1, Lucia Nasi 1, Vincenzo Grillo 2 (2008)
  Chapter 5: Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures
  ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi) in Characterization of Semicondutor Heterostructures and Nanostructures, 1st edition, 2008
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Laura Lazzarini 1, Lucia Nasi 1, Vincenzo Grillo 2 (literal)

Pagina inizio

• 133 (literal)

Pagina fine

• 173 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Characterization of Semicondutor Heterostructures and Nanostructures, 1st edition (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMEM-CNR, Parma, Italy; S3 nano- CNR, Modena, Italy (literal)

Titolo

• Chapter 5: Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-0-444-53099-8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• C. Lamberti (literal)

Abstract

• Nowadays, the advanced discovery and development of nanometric scale-structured materials with innovative properties require investigation techniques able to perform characterizations down to the atomic scale. The modern transmission electron microscopes are now able to accomplish this requirement, not only by imaging but also by obtaining chemical information with atomic resolution. This chapter is mainly devoted to a brief introduction to the transmission electron microscopy technique: the fundamentals of the diffraction and phase contrast are explained, with regard to the defect imaging, the chemical-sensitive imaging, the high-resolution electron microscopy and the lattice fringe analysis. At the end, some examples are discussed, to approach the reader to the problems this technique can solve in the case of quantum well structures. A typical example of the chemical-sensitive imaging and the interpretation of the strain- and defects-induced contrast is shown in InGaAs-based strain-balanced multi-quantum wells. A basic application of the lattice fringes analysis for the composition determination is described in the InGaN/GaN system, while it is shown that the In and N assessment in the InGaAsN alloy requires a combination of the diffraction contrast and the lattice fringes analysis. (literal)

Editore

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Prodotto di

• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)
• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• VINCENZO GRILLO (Persona)
• LUCIA NASI (Unità di personale interno)
• LAURA LAZZARINI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Chapter 5: Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• LUCIA NASI (Unità di personale interno)
• VINCENZO GRILLO (Persona)
• LAURA LAZZARINI (Unità di personale interno)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)
• Sviluppo, caratterizzazione strutturale e modelling di strutture avanzate per elettronica (MD.P05.002.001) (Modulo)

Editore di

• ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS (Editore)

Insieme di parole chiave di

• Keywords of "Chapter 5: Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures" (Insieme di parole chiave)