Vacancy Island Nucleation and Inverse Growth of InSb(110) (Articolo in rivista)

Type
Label
  • Vacancy Island Nucleation and Inverse Growth of InSb(110) (Articolo in rivista) (literal)
Anno
  • 1995-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.51.17957 (literal)
Alternative label
  • D. Cvetko, V. De Renzi, L. Floreano, A. Morgante, M. Peloi, F. Tommasini, V. Chab and K.C. Prince (1995)
    Vacancy Island Nucleation and Inverse Growth of InSb(110)
    in Physical review. B, Condensed matter; The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Cvetko, V. De Renzi, L. Floreano, A. Morgante, M. Peloi, F. Tommasini, V. Chab and K.C. Prince (literal)
Pagina inizio
  • 17957 (literal)
Pagina fine
  • 17964 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://biblioproxy.cnr.it:2204/doi/10.1103/PhysRevB.51.17957 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 51 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 24 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratorio TASC dell' Istituto Nazionale di Fisica della Materia, Padriciano 99, 34012 Trieste, Italy Sincrotrone Trieste SCpA, Padriciano 99, 34012 Trieste, Italy (literal)
Titolo
  • Vacancy Island Nucleation and Inverse Growth of InSb(110) (literal)
Abstract
  • He beam scattering measurements of the erosion of the InSb(110) surface by low-energy Ar+ bombardment are reported. Layer-by-layer erosion is observed for surface temperatures above 510 K and is found to proceed by nucleation of vacancy islands, island growth, and coalescence. The average island distance is measured at different stages of the erosion process and it is found to evolve in good agreement with the rate equations derived from models of island growth by atomic deposition. A general increase of the average terrace width is also observed with increasing number of removed layers. The activation barrier for intralayer diffusion of InSb dimer vacancies is found to be Ed=1.14±0.06 eV. (literal)
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