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Anatomy of mc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry (Articolo in rivista)
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- Anatomy of mc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry (Articolo in rivista) (literal)
- Anno
- 2000-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.1287129 (literal)
- Alternative label
Losurdo M.1, Rizzoli R.2, Summonte C.2, Cicala G.1, Capezzuto P.3, Bruno G.1 (2000)
Anatomy of mc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry
in Journal of applied physics
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- Losurdo M.1, Rizzoli R.2, Summonte C.2, Cicala G.1, Capezzuto P.3, Bruno G.1 (literal)
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- 1Plasma Chemistry Research Center, CNR, via Orabona, 4-70126 Bari, Italy;
2LAMEL Institute, CNR, I-40129 Bologna, Italy;
3Dipartimento di Chimica Università di Bari, via Orabona, 4-70126 Bari, Italy (literal)
- Titolo
- Anatomy of mc-Si thin films by plasma enhanced chemical vapor deposition: An investigation by spectroscopic ellipsometry (literal)
- Abstract
- A detailed analysis of the anatomy of microcrystalline (mc-Si) films deposited by plasma enhanced chemical vapor deposition from both SiF4-H2 and SiH4-H2 mixtures is performed by spectroscopic ellipsometry (SE). Specifically, the mc-Si film anatomy consists of an interface layer at the substrate/mc-Si bulk layer, a bulk mc-Si layer, and a surface porous layer. All these layers have their own microstructures, which need to be highlighted, since it is this overall anatomy which determines the optical properties of mc-Si films. The ability of SE to discriminate the complex microstructure of mc-Si thin films is emphasized also by the comparison with the x-ray diffraction data which cannot provide unambiguous information regarding the distribution of the crystalline and the amorphous phases along the mc-Si film thickness. Through the description of the mc-Si film anatomy, information on the effect of the growth precursors (SiF4 or SiH4) and of the substrate (c-Si or Corning glass) on the growth dynamics can be obtained. The key role of the F-atoms density and, therefore, of the etching-to-deposition competition on the growth mechanism and film microstructure is highlighted. (literal)
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