EBIC and DLTS study of not-intentionally contaminated Si epistructures submitted to segregation and relaxation gettering (Abstract/Poster in convegno)

Type
Label
  • EBIC and DLTS study of not-intentionally contaminated Si epistructures submitted to segregation and relaxation gettering (Abstract/Poster in convegno) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • C. Frigeri, E. Gombia and A. Motta (2006)
    EBIC and DLTS study of not-intentionally contaminated Si epistructures submitted to segregation and relaxation gettering
    in EDS 2006, Extended Defects in Semiconductors, Halle (Germania), 17 - 22 sett. 2006
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Frigeri, E. Gombia and A. Motta (literal)
Pagina inizio
  • P22 (literal)
Pagina fine
  • P22 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • abstract book (literal)
Note
  • Abstract (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy (literal)
Titolo
  • EBIC and DLTS study of not-intentionally contaminated Si epistructures submitted to segregation and relaxation gettering (literal)
Abstract
  • An EBIC study of bulk micro defects (BMDs) in not-intentionally contaminated epi Si submitted to both relaxation and segregation gettering and with an unknown initial contaminant concentration below the sensitivity of DLTS has been carried out. It allowed to establish which was the contaminant (Fe) and the possible range of its initial concentration. An evaluation of the behaviour of the BMDs during relaxation gettering and of the contribution of relaxation gettering to the overall gettering process was performed. (literal)
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