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Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications (Contributo in atti di convegno)

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Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications (Contributo in atti di convegno) (literal)

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C. Ferrari 1, M. Bosi 1, G. Attolini 1, C. Frigeri 1, E. Gombia 1, C. Pelosi 1, S. Arumainathan 2 and N. Musayeva 3 (2008)
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications
in 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice (SLOVAKIA), OCT 12-16, 2008
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C. Ferrari 1, M. Bosi 1, G. Attolini 1, C. Frigeri 1, E. Gombia 1, C. Pelosi 1, S. Arumainathan 2 and N. Musayeva 3 (literal)

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Conference: 7th International Conference on Advanced Semiconductor Devices and Microsystems Location: Smolenice, SLOVAKIA Date: OCT 12-16, 2008 Sponsor(s): EDS; IEEE; ELU; IEE; Slovak Acad Sci, Inst Elect Engn; Slovak Univ Technol, Fac Elet Engn & Informat Technol, Microelect Dept (literal)

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2008 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) (literal)

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1 CNR-IMEM Institute, Viale Usberti 37/A, 43010 Fontanini, Parma (Italy); 2 Department of Nuclear Physics, Guindi Campus, Chennai 600025 India; 3 Institute of Physics, Azerbaijan National Academy of Sciences, H. Javid avenue, 33, AZ-1 143, Baku, Azerbaijan. (literal)

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Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications (literal)

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Abstract

In the present work we report the results of characterization of epitaxial Ge/Ge layers using vapour phase epitaxy using either only isobutilgermane as a precursor or adding doses of AsH3 as surfactant to obtain a better surface morphology. When iBuGe partial pressure was below 4x10(-6) the Ge layers showed good morphology and crystallographic quality with best results on samples grown on exactly oriented (001) Ge substrates. The use AsH3 as surfactant permitted to increase the iBuGe partial pressure used in the growth without degrading the layer properties, even if TEM revealed the presence of an high defect density at the interface. It was concluded that the surfactant, even if reported as \"non reactive\" in literature, was actually incorporated at the layer interface. A p-n junction using Au as ohmic contacts showed a good rectifying behaviour and an open circuit voltage comparable to that reported in literature for diffused Ge cells. (literal)

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