Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Morresi, L; Ayoub, JP; Pinto, N; Ficcadenti, M; Murri, R; Ronda, A; Berbezier, I; D'Orazio, F; Lucari, F (2007)
  Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C
  in Surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Morresi, L; Ayoub, JP; Pinto, N; Ficcadenti, M; Murri, R; Ronda, A; Berbezier, I; D'Orazio, F; Lucari, F (literal)

Pagina inizio

• 2632 (literal)

Pagina fine

• 2635 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 601 (literal)

Rivista

• Surface science (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Camerino, INFM, CNISM, Dept Phys, I-62032 Camerino, Italy; Polytech Marseille, CNRS, L2MP, F-13451 Marseille 20, France; Univ Aquila, CNR, INFM, Dept Phys, I-67010 Coppito, Italy (literal)

Titolo

• Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C (literal)

Abstract

• We report on the structural, magnetic and electronic transport properties of thin MnxGe1-x films grown at 350 degrees C. Isolated Mn5Ge3 nanoclusters, about 100 nm in size, were formed at the top surface of the film, dominating the magnetic properties of the whole film. Electronic transport properties show Mn doping effect indicating the presence of substitutional Mn ions dispersed in the Ge host, contributing to the formation of a MnxGe1-x diluted phase. Electrical behaviour indicates a saturation effect with the raise of the nominal Mn concentration in the film, above x congruent to 0.03. (C) 2006 Elsevier B.V. All rights reserved. (literal)

Prodotto di

• Materiali nanostrutturati di ossidi metallici e altri semicondutttori per la sensoristica e applicazioni avanzate (MD.P05.015.001) (Modulo)

Autore CNR

• FRANCO LUCARI (Unità di personale esterno)

Insieme di parole chiave

• Keywords of "Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C" (Insieme di parole chiave)

Incoming links:

Prodotto

• Materiali nanostrutturati di ossidi metallici e altri semicondutttori per la sensoristica e applicazioni avanzate (MD.P05.015.001) (Modulo)

Autore CNR di

• FRANCO LUCARI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Surface science (Rivista)

Insieme di parole chiave di

• Keywords of "Structural, magnetic and electronic transport properties of MnxGe1-x/Ge(001) films grown by MBE at 350 degrees C" (Insieme di parole chiave)