Metal-Metal Epitaxy on Silicon: Cu/Ni/Cu Ultrathin Films on 7x7-Si(111) (Articolo in rivista)

Type
Label
  • Metal-Metal Epitaxy on Silicon: Cu/Ni/Cu Ultrathin Films on 7x7-Si(111) (Articolo in rivista) (literal)
Anno
  • 2000-01-01T00:00:00+01:00 (literal)
Alternative label
  • G. Gubbiotti(1), G. Carlotti(1), C. Minarini(2), S. Loreti(3), R. Gunnella(4), M. De Crescenzi(4) (2000)
    Metal-Metal Epitaxy on Silicon: Cu/Ni/Cu Ultrathin Films on 7x7-Si(111)
    in Surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Gubbiotti(1), G. Carlotti(1), C. Minarini(2), S. Loreti(3), R. Gunnella(4), M. De Crescenzi(4) (literal)
Pagina inizio
  • 218 (literal)
Pagina fine
  • 226 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 449 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Via A. Pascoli, I-06100 Perugia, Italy (2) C.R. ENEA, I-80055 Portici, Napoli, Italy (3) C.R. ENEA Casaccia, Via Anguillarese 301, 00060 Roma, Italy (4) Istituto Nazionale per la Fisica della Materia, Dipartimento di Matematica e Fisica, Via Madonna delle Carceri, I-62032 Camerino, Italy (literal)
Titolo
  • Metal-Metal Epitaxy on Silicon: Cu/Ni/Cu Ultrathin Films on 7x7-Si(111) (literal)
Abstract
  • Cu/Ni/Cu heterostructures have been in situ deposited on the 7×7 reconstructed Si(111) surface. A number of complementary techniques, such as in situ low-energy, medium-energy and Kikuchi electron diffraction and ex situ X-ray diffraction, were used in order to characterise the growth process and the structural properties of the films. It is found that the growth mode of metallic films is characterised by the presence of twinned islands induced by the 7×7 reconstruction of the Si(111) substrate. This work can stimulate further application of the metal-metal epitaxy on silicon to grow high quality ultrathin magnetic films to be integrated in microelectronic devices. © 2000 Elsevier Science B.V. All rights reserved. (literal)
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