Strain, composition and disorder in ADF imaging of semiconductors (Comunicazione a convegno)

Type
Label
  • Strain, composition and disorder in ADF imaging of semiconductors (Comunicazione a convegno) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • V. Grillo 1,2, K. Mueller 3, C. Frigeri 2, K. Volz 4, F. Glas 5, A. Rosenauer 3 (2011)
    Strain, composition and disorder in ADF imaging of semiconductors
    in Microscopy of Semiconducting Materials 2011, Cambridge (UK), 4-7 April 2011
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • V. Grillo 1,2, K. Mueller 3, C. Frigeri 2, K. Volz 4, F. Glas 5, A. Rosenauer 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 S3-NANO, CNR Via Campi 213A, I-41125 Modena, Italy; 2 CNR-IMEM Institute Parco Area delle Scienze37/A, I-43010 Parma, Italy; 3 Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, D-28359 Bremen, Germany; 4 Materials Science Center and Faculty of Physics, Philipps University Marburg, Germany; 5Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France (literal)
Titolo
  • Strain, composition and disorder in ADF imaging of semiconductors (literal)
Abstract
  • The effect of strain, composition and disorder in ADF images is systematically studied as a function of detection angle in order to understand the main contrast mechanisms. We demonstrate that the complex phenomenology in ADF images can be accounted for by accurate simulations and modelling. The advantage of an accurate modelling on the image interpretation will be demonstrated in the case of dislocations, chemical analysis of InGaP/GaAs and most noticeably the measurement of both In and N content in quaternary InGaAsN. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Insieme di parole chiave di
data.CNR.it