Spectroscopic and structural studies on volatile gallium ?-diketonates as potential precursors for MOCVD (Articolo in rivista)

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Label
  • Spectroscopic and structural studies on volatile gallium ?-diketonates as potential precursors for MOCVD (Articolo in rivista) (literal)
Anno
  • 1994-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/0020-1693(93)03743-T (literal)
Alternative label
  • Ballarin B.; Battiston G.A.; Benetollo F.; Gerbasi R.; Porchia M.; Favretto D.; Traldi P. (1994)
    Spectroscopic and structural studies on volatile gallium ?-diketonates as potential precursors for MOCVD
    in Inorganica Chimica Acta (Testo stamp.)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ballarin B.; Battiston G.A.; Benetollo F.; Gerbasi R.; Porchia M.; Favretto D.; Traldi P. (literal)
Pagina inizio
  • 71 (literal)
Pagina fine
  • 78 (literal)
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  • http://ac.els-cdn.com/002016939303743T/1-s2.0-002016939303743T-main.pdf?_tid=1dfecdee-ceb5-11e2-a10a-00000aacb361&acdnat=1370528986_13c4cb930d56d0d0de99e9100024d603 (literal)
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  • 217 (literal)
Rivista
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  • 8 (literal)
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  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
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  • 1-5 CNR, Institute of Chemistry and Inorganic Technologies and of Advanced Materials, Corso Stati Uniti 4, I-35020 Padua, Italy 6-7 CNR, Area della Ricerca di Padova, Corso Stati Uniti 4, I-25020 Padua, Italy (literal)
Titolo
  • Spectroscopic and structural studies on volatile gallium ?-diketonates as potential precursors for MOCVD (literal)
Abstract
  • The complexes Ga(hfac)3 (Hhfac=hexafluoroacetylacetone) and Ga(dpm)3 (Hdpm=dipivaloylmethane) have been studied by solid and gas phase IR, mass spectrometry, 1H and 13C NMR, in order to prove their suitability as precursors for Ga2O3 deposition via metalorganic chemical vapor deposition (MOCVD). The crystal structure of Ga(hfac)3 was also determined. The complex crystallizes in the monoclinic space group P21/n with a=9.034(3), b=13.399(3), c=19.100(4) Å, ?=92.19(3)° for Z=4. The final R factor was 0.048. The Ga(III) ion exhibits a regular octahedral coordination with Ga?O bond distance of 1.954(5) Å (av. value). The X-ray, IR and MS studies showed the presence of identical monomeric species both in the solid and in the gas phase. Ga(hfac)3 was used in preliminary MOCVD experiments to grow Ga2O3 films. (literal)
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