Indium in silicon: interactions with native defects and with C impurities (Contributo in atti di convegno)

Type

• Prodotto della ricerca (Classe)
• Contributo in atti di convegno (Classe)

Label

• Indium in silicon: interactions with native defects and with C impurities (Contributo in atti di convegno) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• Alippi, P; La Magna, A; Scalese, S; Privitera, V (2004)
  Indium in silicon: interactions with native defects and with C impurities
  in Symposium on Silicon Front-End Junction Formation-Physics and Technology held at the 2004 MRS Spring Meeting, San Francisco, CA, APR 13-15, 2004
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Alippi, P; La Magna, A; Scalese, S; Privitera, V (literal)

Pagina inizio

• 281 (literal)

Pagina fine

• 285 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 810 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy (literal)

Titolo

• Indium in silicon: interactions with native defects and with C impurities (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 1-55899-760-1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Pichler, P; Claverie, A; Lindsay, R; Orlowski, M; Windl, W (literal)

Abstract

• Equilibrium geometries and formation energies of neutral and charged In complexes with silicon native defects (vacancy (V) and self-interstitials (I)) and with C impurities are investigated within density functional theory, using the Vienna Ab-initio Simulation Package. We determine formation energies and ionization levels of different complexes and discuss the contribution of I and V to indium diffusion. We also identify the In-C defect responsible for the increased electrical activation in In+C-doped silicon samples. The ab initio energetics is then implemented in a continuum diffusion code in order to simulate the diffusion of as-implanted In profiles under different thermal treatments. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• PAOLA ALIPPI (Persona)
• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• SILVIA SCALESE (Persona)

Insieme di parole chiave

• Parole chiave di "Indium in silicon: interactions with native defects and with C impurities" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• PAOLA ALIPPI (Persona)
• SILVIA SCALESE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Insieme di parole chiave di

• Parole chiave di "Indium in silicon: interactions with native defects and with C impurities" (Insieme di parole chiave)