Chemical vapour deposition and characterization of gallium oxide thin films (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Chemical vapour deposition and characterization of gallium oxide thin films (Articolo in rivista) (literal)

Anno

• 1996-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/0040-6090(95)08161-5 (literal)

Alternative label

• Battiston G.A.; Gerbasi R.; Porchia M.; Bertoncello R.; Caccavale F. (1996)
  Chemical vapour deposition and characterization of gallium oxide thin films
  in Thin solid films (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Battiston G.A.; Gerbasi R.; Porchia M.; Bertoncello R.; Caccavale F. (literal)

Pagina inizio

• 115 (literal)

Pagina fine

• 118 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://ac.els-cdn.com/0040609095081615/1-s2.0-0040609095081615-main.pdf?_tid=e8172bc2-cd1a-11e2-b4d2-00000aacb35e&acdnat=1370352802_9bed0ef06036247455ef29e2ad7e245c (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 279 (literal)

Rivista

• Thin solid films (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-2 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1-3 CNR, Ist. Chim. Tecnologie Inorganiche M., Corso Stati Uniti 4, I-35127 Padova, Italy / 4 Dipartimento di Chimica Inorganica, Metallorganica Ed Analitica, Università di Padova, Via Loredan 4, I-35100 Padova, Italy/ 5 INFM, Dipartimento di Fisica, Università di Padova, via Marzolo 8, I-35131 Padova, Italy (literal)

Titolo

• Chemical vapour deposition and characterization of gallium oxide thin films (literal)

Abstract

• Gallium oxide thin films were deposited on alumina and TiO2 substrates by metal organic chemical vapour deposition using gallium tris-hexafluoroacetylacetonate (Ga(hfac)3) as precursor in the presence of oxygen. The depositions were carried out at 470 °C and 2.6 kPa leading to a growth rate of 0.7 ?mh-1. As-grown films appeared black, smooth and well adherent to the substrates. X-Ray photoelectron spectroscopy (XPS) analysis revealed stoichiometric Ga2O3 with a low carbon content (less than 5%) and almost undetectable fluorine. As-deposited Ga2O3 films were X-ray amorphous, but the onset of a crystallization process was evident after annealing in dry air at 700°C. Moreover, after thermal treatment, the films became carbon free and transparent in the visible range. The effect of annealing at different temperatures on the film structure was investigated by X-ray diffraction. A phase modification from amorphous to polycrystalline Ga2O3 was observed after thermal treatment at temperatures from 600 to 1000°C. As shown by secondary ion mass spectrometry (SIMS) studies, Al diffusion into Ga2O3 films was detected after annealing at 1000°C when pure Al2O3 was used as substrate; this diffusion was completely inhibited using a TiO2 film as buffer layer with a thickness of at least 4 ?m (literal)

Prodotto di

• Istituto di chimica inorganica e delle superfici (ICIS) (Istituto)

Autore CNR

• MARINA PORCHIA (Unità di personale interno)
• ROSALBA GERBASI (Unità di personale interno)

Insieme di parole chiave

• Keywords of "Chemical vapour deposition and characterization of gallium oxide thin films" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di chimica inorganica e delle superfici (ICIS) (Istituto)

Autore CNR di

• MARINA PORCHIA (Unità di personale interno)
• ROSALBA GERBASI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Thin solid films (Rivista)

Insieme di parole chiave di

• Keywords of "Chemical vapour deposition and characterization of gallium oxide thin films" (Insieme di parole chiave)