Evolution of Ge/ S (001)islands during Si capping at high temperature (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Evolution of Ge/ S (001)islands during Si capping at high temperature (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2141652 (literal)

Alternative label

• G. Capellini, M. De Seta, L. Di Gaspare, and F. Evangelisti,F. d'Acapito (2005)
  Evolution of Ge/ S (001)islands during Si capping at high temperature
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• G. Capellini, M. De Seta, L. Di Gaspare, and F. Evangelisti,F. d'Acapito (literal)

Pagina inizio

• 124901 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 98 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Università Roma Tre, Via della Vasca Navale 84, I-00146 Roma, Italy CNR-INFM-OGG c/o European Synchrotron Radiation Facility GILDA CRG, 6, Rue Jules Horowitz, F-38043 Grenoble, France (literal)

Titolo

• Evolution of Ge/ S (001)islands during Si capping at high temperature (literal)

Abstract

• We discuss the effect of the deposition of a Si cap layer on the composition and morphological properties of Ge?Si?/Si?001? self-assembled islands deposited by chemical vapor deposition at 750 ° C. The morphological evolution of the island shape was investigated by means of atomic force microscopy and the actual island composition has been measured by means of x-ray photoemission spectroscopy and x-ray absorption spectroscopy techniques. At an early stage of Si capping, Si atoms are incorporated in the island layer. As a consequence, we observe a reverse Stranski-Krastanov growth dynamics in agreement with the volume-composition stability diagram proposed for domes, pyramids, and prepyramids in the Gex Si1-x /Si?100? system. We find that the island burying begins when the Ge average composition reaches the valuex= 0.28. Once the islands are buried under a thin silicon layer their composition is unaffected by subsequent silicon deposition. We conclude that strain relief, rather than thermal diffusion, is the main driving force for the observed Ge-Si alloying. (literal)

Prodotto di

• Sviluppo di strumentazione e di metodologie sperimentali avanzate per lo studio delle proprieta strutturali dei materiali con raggi X da sincrotrone (MD.P04.007.001) (Modulo)

Autore CNR

• FRANCESCO D'ACAPITO (Persona)

Incoming links:

Autore CNR di

• FRANCESCO D'ACAPITO (Persona)

Prodotto

• Sviluppo di strumentazione e di metodologie sperimentali avanzate per lo studio delle proprieta strutturali dei materiali con raggi X da sincrotrone (MD.P04.007.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)