Residual stress in Ni-Mn-Ga thin films deposited on different substrates. (Articolo in rivista)

Type
Label
  • Residual stress in Ni-Mn-Ga thin films deposited on different substrates. (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1140/epjst/e2008-00660-8 (literal)
Alternative label
  • Doyle, S (Doyle, S.)[ 1 ] ; Chernenko, VA (Chernenko, V. A.)[ 2,3 ] ; Besseghini, S (Besseghini, S.)[ 3 ] ; Gambardella, A (Gambardella, A.)[ 3 ] ; Kohl, M (Kohl, M.)[ 4 ] ; Mullner, P (Muellner, P.)[ 5 ] ; Ohtsuka, M (Ohtsuka, M.)[ 6 ] (2008)
    Residual stress in Ni-Mn-Ga thin films deposited on different substrates.
    in The European physical journal. Special topics; Springer, Milano-Heidelberg-New York (Italia)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Doyle, S (Doyle, S.)[ 1 ] ; Chernenko, VA (Chernenko, V. A.)[ 2,3 ] ; Besseghini, S (Besseghini, S.)[ 3 ] ; Gambardella, A (Gambardella, A.)[ 3 ] ; Kohl, M (Kohl, M.)[ 4 ] ; Mullner, P (Muellner, P.)[ 5 ] ; Ohtsuka, M (Ohtsuka, M.)[ 6 ] (literal)
Pagina inizio
  • 99 (literal)
Pagina fine
  • 105 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 158 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [ 1 ] Forschungszentrum Karlsruhe, ANKA, D-76021 Karlsruhe, Germany [ 2 ] Inst Magnetism, UA-03142 Kiev, Ukraine [ 3 ] CNR, IENI, I-23900 Lecce, Italy [ 4 ] Forschungszentrum Karlsruhe, IMT, D-76021 Karlsruhe, Germany [ 5 ] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA [ 6 ] Tohoku Univ, IMRAM, Sendai, Miyagi 9808577, Japan (literal)
Titolo
  • Residual stress in Ni-Mn-Ga thin films deposited on different substrates. (literal)
Abstract
  • Four series of Ni(51.4)Mn(28.3)Ga(20.3)/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni(53.5)Mn(23.8)Ga(22.7)/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 mu m have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d(220) is studied for the films deposited on Si(100). (literal)
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